BUZP datasheet, BUZP circuit, BUZP data sheet: SAVANTIC – Silicon NPN Power Transistors,alldatasheet, datasheet, Datasheet search site for. BUZP isc Silicon NPN Power Transistor. DESCRIPTIONHigh VoltageDARLINGTONIntegrated High Voltage Zener APPLICATIONSApplication in high. BUZP from STMicroelectronics, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.

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Ceramic chip carriers — 28,44,52,68,84 and leads. Plastic DIPs — 24,28,40,48 leads. They are in fact a large number of standard circuit hu931zp, up to Ceramic DIPs — 24,28,40,48 leads. During power-up the device tests the supply voltage and keeps the reset outputs active as long as the supply voltage has non reached its nominal voltage value.

The range covers consumer to military temperature ranges and is available in four packages options. Max 2 HSG 32 1 3 36 5. With its fast turnaround time and low development cost gate arrays is the ideal solution for low production volume design. No license datasyeet granted by implication or otherwise under any patent or patent rights of SGS.

In this type of package the leads are folded under the package ready for surface mounting. The high speed Z80H bbu931zp 8 MHz clock operation.

BUZP datasheet(1/3 Pages) SAVANTIC | Silicon NPN Power Transistors

The products listed in the following pages represent only a part of the whole products range designed and manufactured by the SGS Subsystems group. Search the history of over billion web pages on the Internet.


Plastic chip carriers — 20,44,68,84 leads. Olivetti 2, Agrate Brianza-ltaly Tel.: Maximum voltage must not exceed 40 V. The family has a unique architecture, the main features of which are Operating System software support, Compiler support and memory ma- nagement.

On request virtually all devices are supplied in wafer form for hybrid assembly; SGS has established high volume experience in this service. Ceramic Pin-grid arrays — 64,68,84, and leads. Maximum voltage must not exceed 48 V.

BUZP Savantic, Inc. | WIN SOURCE

For output rectification fast recovery power diodes page 55 are available. The HCMOS technology allows 3 to 6V supply voltage range, low power consumption and fully static operation, while the serial architecture gives significant contribution to reduce the die size. Zodiac chips are therefore cheap to develop dagasheet cheap to produce. They include custom boards and modules perfor- ming various logic and analog functions based on the leading SGS silicon technology. Ceramic DIPs — 16,18,20,24,28,40 and 48 leads.

Datasheeets & Application Notes

From that small nucleus, the company has evolved into a Group of Companies, operating on a worldwide basis as a broad range semiconductor producer, with billings over million dollars and employing over people. The power dissipation is equivalent to a non isolated SOT TO device mounted with external electrical isolation. Fiberglass Pin-grid arrays — 64,68,84,, and leads.


This pin is connected to case. This publication superse- des and substitutes all information previously bu931zpp.

The availability of bipolar power transistors, fast recovery power diodes and Power MOS with a choice of package styles enable an optimum solution to be found. GNDi – Ground Common ground for input voltage. The GS-R incorporates many extra features like thermal protection, soft start, load crow bar pro- tection, reset output, non-latching short circuit protection.

If further information is required SGS will provide individual data sheets for all the devices on request. For vertical deflection, requiring higher powers than SGS integrated solutions see page 79 can provi- de, a wide range of standard transistors and darlingtons are manufactured by SGS see pages 1 13 to 1 The device is protected against short circuit of this pin to ground or to supply. Specifications mentioned in this publication are subject to change without notice.

GNDin – Ground Common ground for input voltage. Full text of ” sgs:: Each device is presented along with its essential electrical characteristics. However, no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use.

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